STB55NE06 n - channel enhancement mode o single feature size ? o power mosfet n typical r ds(on) = 0.019 w n exceptional dv/dt capability n 100% avalanche tested n low gate charge 100 o c n high dv/dt capability n application oriented characterization n for through-hole version contact sales office description this power mosfet is the latest development of sgs-thomson unique osingle feature sizeo strip-based process. the resulting transistor shows extremely high packing density for low on- resistance, rugged avalance characteristics and less critical alignment steps therefore a remark- able manufacturing reproducibility. applications n dc motor control n dc-dc & dc-ac converters n synchronous rectification internal schematic diagram december 1997 1 3 d 2 pak to-263 (suffix ot4o) absolute maximum ratings symbol parameter value unit v ds drain-source voltage (v gs =0) 60 v v dgr drain- gate voltage (r gs =20k w ) 60 v v gs gate-source voltage 20 v i d drain current (continuous) at t c =25 o c55a i d drain current (continuous) at t c =100 o c39a i dm ( ? ) drain current (pulsed) 220 a p tot total dissipation at t c =25 o c 130 w derating factor 0.96 w/ o c dv/dt peak diode recovery voltage slope 7 v/ns t stg storage temperature -65 to 175 o c t j max. operating junction temperature 175 o c ( ? ) pulse width limited by safe operating area ( 1 )i sd 55 a, di/dt 300 a/ m s, v dd v (br)dss ,t j t jmax type v dss r ds(on) i d STB55NE06 60 v < 0.022 w 55 a 1/8 .com .com .com .com 4 .com u datasheet
thermal data r thj-case rthj-amb r thc-sink t l thermal resistance junction-case max thermal resistance junction-ambient max thermal resistance case-sink typ maximum lead temperature for soldering purpose 1.15 62.5 0.5 300 o c/w oc/w o c/w o c avalanche characteristics symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max, d <1%) 55 a e as single pulse avalanche energy (starting t j =25 o c, i d =i ar ,v dd =25v) 200 mj electrical characteristics (t case =25 o c unless otherwise specified) off symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 m av gs =0 60 v i dss zero gate voltage drain current (v gs =0) v ds =maxrating v ds =maxrating t c =125 o c 1 10 m a m a i gss gate-body leakage current (v ds =0) v gs = 20 v 100 na on ( * ) symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds =v gs i d =250 m a 234v r ds(on) static drain-source on resistance v gs = 10v i d = 27.5 a 0.019 0.022 w i d(o n) on state drain current v ds >i d(on) xr ds(on)max v gs =10v 55 a dynamic symbol parameter test conditions min. typ. max. unit g fs ( * )forward transconductance v ds >i d(on) xr ds(on)max i d =27.5 a 25 35 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds =25v f=1mhz v gs = 0 3050 380 100 4000 500 130 pf pf pf STB55NE06 2/8 .com .com .com .com .com 4 .com u datasheet
electrical characteristics (continued) switching on symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on time rise time v dd =30v i d =27.5a r g =4.7 w v gs =10v (see test circuit, figure 3) 30 120 40 160 ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd =48v i d =55a v gs =10v 80 13 25 105 nc nc nc switching off symbol parameter test conditions min. typ. max. unit t r(voff) t f t c off-voltage rise time fall time cross-over time v dd =48v i d =55a r g =4.7 w v gs =10v (see test circuit, figure 5) 20 50 75 30 70 100 ns ns ns source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm ( ? ) source-drain current source-drain current (pulsed) 55 220 a a v sd ( * )forwardonvoltage i sd =60a v gs =0 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 55 a di/dt = 100 a/ m s v dd =30v t j = 150 o c (see test circuit, figure 5) 110 430 7.5 ns m c a ( * ) pulsed: pulse duration = 300 m s, duty cycle 1.5 % ( ? ) pulse width limited by safe operating area safe operating area thermal impedance STB55NE06 3/8 .com .com .com .com .com 4 .com u datasheet
output characteristics transconductance gate charge vs gate-source voltage transfer characteristics static drain-source on resistance capacitance variations STB55NE06 4/8 .com .com .com .com .com 4 .com u datasheet
normalized gate threshold voltage vs temperature source-drain diode forward characteristics normalized on resistance vs temperature STB55NE06 5/8 .com .com .com .com .com 4 .com u datasheet
fig. 1: unclamped inductive load test circuit fig. 3: switching times test circuits for resistive load fig. 2: unclamped inductive waveform fig. 4: gate charge test circuit fig. 5: test circuit for inductive load switching and diode recovery times STB55NE06 6/8 .com .com .com .com .com 4 .com u datasheet
dim. mm inch min. typ. max. min. typ. max. a 4.3 4.6 0.169 0.181 a1 2.49 2.69 0.098 0.106 b 0.7 0.93 0.027 0.036 b2 1.25 1.4 0.049 0.055 c 0.45 0.6 0.017 0.023 c2 1.21 1.36 0.047 0.053 d 8.95 9.35 0.352 0.368 e 10 10.28 0.393 0.404 g 4.88 5.28 0.192 0.208 l 15 15.85 0.590 0.624 l2 1.27 1.4 0.050 0.055 l3 1.4 1.75 0.055 0.068 l2 l3 l b2 b g e a c2 d c a1 p011p6/c to-263 (d2pak) mechanical data STB55NE06 7/8 .com .com .com .com .com 4 .com u datasheet
information furnished is believed to be accurate and reliable. however, sgs-thomson microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. no license is granted by implication or otherwise under any patent or patent rights of sgs-thomson microelectronics. specifications mentioned in this publication are subject to change without notice. this publication supersede s and replaces all information previously supplied. sgs-thomson microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of sgs-thomson microelectonics. ? 1997 sgs-thomson microelectronics - printed in italy - all rights reserved sgs-thomson microelectronics group of companies australia - brazil - canada - china - france - germany - italy - japan - korea - malaysia - malta - morocco - the netherlands - singapore - spain - sweden - switzerland - taiwan - thailand - united kingdom - u.s.a ... STB55NE06 8/8 .com .com .com .com 4 .com u datasheet
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